p-n junction

Preparation p-n junction by phosphorus pentoxide sublimation, the most influence on square resistance is reaction time followed by flow and silicon reaction temperature, the least is phosphorus oxychloride diffusion.

五氧化二磷升华制备p-n结，对方块电阻影响最大的是反应时间，其次是气流量和硅片反应温度，P2O5升华温度影响较小。

Realization of fuzzy logic controller for THERMAUTOSTAT with semiconductor p-n junction cooler by bidirectional regulating

半导体致冷堆双向调节恒温模糊逻辑控制器的实现

The abnormal decay in nonsteady state of p-n junction in the forward direction

p-n结正向不稳态的异常衰减

Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device

通过倾斜多晶硅p-n结光电器件提高光电转换性能

Study on the response of p-n junction for Hight power microwave illumination

高功率微波激励下p-n结器件响应

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

In the uniformity comparison of preparation p-n junction by phosphorus oxychloride diffusion and by phosphorus pentoxide sublimation, it is more uniformity that p-n junction preparation by phosphorus pentoxide sublimation.

三氯氧磷扩散与五氧化二磷升华制备p-n结的均匀性比较中，用五氧化二磷升华制备出的p-n结要更加均匀。

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology.

采用工业标准06μM CMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。

Electric Field Effect on the Thermal Emission Rate of Holes Trapped at Gold Donor Center in Si P-N Junction

硅P-N结电场对金施主中心空穴热发射率的影响

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

It is found that asymmetry doping at the ribbon edge causes the the spin polarization effect, leading to the current split of two spins, and that under the AF state the heterojunction with symmetry doping shows the one direction conductivity and P-N junction effect.

研究发现，边缘的不对称性掺杂引起了自旋极化效应，使自旋电流发生分裂；而对称性掺杂的异质结在反铁磁构型下出现了明显的单向导电性，显示出P-N结效应。

Some results of the application of if integrated circuits of p-n junction isolation for radiotelescope receiver

射电望远镜接收机使用PN结隔离中频组件的一些结果

Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes

7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究